An E-mode $\beta$-Ga2O3 metal-heterojunction composite field effect transistor with a record high P-FOM of 0.73 GW/cm2

التفاصيل البيبلوغرافية
العنوان:	An E-mode $\beta$-Ga2O3 metal-heterojunction composite field effect transistor with a record high P-FOM of 0.73 GW/cm2
المؤلفون:	Wang, Xichen, Lu, Xiaoli, He, Yunlong, Liu, Peng, Shao, Yv, Li, Jianing, Yang, Yitong, Li, Yuan, Hao, Yue, Ma, Xiaohua
المصدر:	2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :390-393 May, 2023
Relation:	2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات:	IEEE Xplore Digital Library