التفاصيل البيبلوغرافية
| العنوان: |
Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations |
| المؤلفون: |
Piotrowic, C., Mohamad, B., Rocha, P. Fernandes Paes Pinto, Malbert, N., Ruel, S., Pimenta-Barros, P., Jaud, M.-A., Vauche, L., Royer, C. Le |
| المصدر: |
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :382-385 May, 2023 |
| Relation: |
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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