التفاصيل البيبلوغرافية
| العنوان: |
A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm2 Bit Density |
| المؤلفون: |
Khakifirooz, A., Anaya, E., Balasubrahmanyam, S., Bennett, G., Castro, D., Egler, J., Fan, K., Ferdous, R., Ganapathi, K., Guzman, O., Ha, C.W., Haque, R., Harish, V., Jalalifar, M., Jungroth, O.W., Kang, S., Karbasian, G., Kim, J., Li, S., Madraswala, A.S., Maddukuri, S., Mohammed, A., Mookiah, S., Nagabhushan, S., Ngo, B., Patel, D., Poosarla, S.K., Prabhu, N.V., Quiroga, C., Rajwade, S., Rahman, A., Shah, J., Shenoy, R.S., Menson, E.T., Tankasala, A., Thirumala, S.K., Upadhyay, S., Upadhyayula, K., Velasco, A., Vemula, N.K.B., Venkataramaiah, B., Zhou, J., Pathak, B.M., Kalavade, P. |
| المصدر: |
IEEE Solid-State Circuits Letters IEEE Solid-State Circuits Lett. Solid-State Circuits Letters, IEEE. 6:161-164 2023 |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
Full Text Finder