دورية أكاديمية
A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors
| العنوان: | A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors |
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| المؤلفون: | Hsieh, E.R., Hsueh, Y.L., Lin, R.Q., Huang, Y.X., Hou, P.J., Chang, K.H., Shen, T.H., Li, Y.H., Lyu, R.Y. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(8):1292-1295 Aug, 2023 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2023.3289179 |