Ion implantation-induced damage in 4H-SiC detected by photo-modulated reflectance

التفاصيل البيبلوغرافية
العنوان: Ion implantation-induced damage in 4H-SiC detected by photo-modulated reflectance
المؤلفون: Zolnai, Z., Szivos, J., Sepsi, O., Ujhelyi, F., Bozoki, Z., Denes, B., Ullrich, D., Flender, R., Miron, D., Kovacs, B. M., Deli, Z. F., Kovacs, K., Nadudvari, G., Balogh, L.
المصدر: 2023 21st International Workshop on Junction Technology (IWJT) Junction Technology (IWJT), 2023 21st International Workshop on. :1-3 Jun, 2023
Relation: 2023 21st International Workshop on Junction Technology (IWJT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9784863488076
تدمد:27682153
DOI:10.23919/IWJT59028.2023.10175169