دورية أكاديمية
Interfacial Oxide Layer Scavenging in Ferroelectric Hf0.5Zr0.5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages
| العنوان: | Interfacial Oxide Layer Scavenging in Ferroelectric Hf0.5Zr0.5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages |
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| المؤلفون: | Park, C., Kashyap, H., Das, D., Hur, J., Tasneem, N., Lombardo, S., Afroze, N., Chern, W., Kummel, A.C., Yu, S., Khan, A.I. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(8):4479-4483 Aug, 2023 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2023.3288510 |