Physical Understanding on the Anti-fuse Instability to Construct a Selector-Type One-Time-Programming Memory in the High-k Metal-Gate CMOS Generation

التفاصيل البيبلوغرافية
العنوان: Physical Understanding on the Anti-fuse Instability to Construct a Selector-Type One-Time-Programming Memory in the High-k Metal-Gate CMOS Generation
المؤلفون: Chuang, C. C., Chang, C. W., Chen, H. W., Kao, T. C., Li, Y. J., Guo, J. C., Chung, Steve S.
المصدر: 2023 Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2023. :115-116 Jun, 2023
Relation: 2023 Silicon Nanoelectronics Workshop (SNW)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9784863488083
تدمد:21614644
DOI:10.23919/SNW57900.2023.10183939