3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching

التفاصيل البيبلوغرافية
العنوان:	3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching
المؤلفون:	Hsieh, E. R., Tang, Y. T., Liu, C. R., Wang, S. M., Hsueh, Y. L., Lin, R. Q., Huang, Y. X., Chen, Y. T.
المصدر:	2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023
Relation:	2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
قاعدة البيانات:	IEEE Xplore Digital Library