QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering

التفاصيل البيبلوغرافية
العنوان: QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering
المؤلفون: Yoon, Sunghyun, Hong, Sung-In, Kim, Daehyun, Choi, Garam, Kim, Young Mo, Min, Kyunghoon, Kim, Seiyon, Na, Myung-Hee, Cha, Seonyong
المصدر: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023
Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9784863488069
تدمد:21589682
DOI:10.23919/VLSITechnologyandCir57934.2023.10185294