Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor

التفاصيل البيبلوغرافية
العنوان:	Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor
المؤلفون:	Kim, Seongho, Park, Young Keun, Lee, Gyu Soup, Shin, Eui Joong, Ko, Woon San, Lee, Hi Deok, Lee, Ga Won, Cho, Byung Jin
المصدر:	2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023
Relation:	2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
قاعدة البيانات:	IEEE Xplore Digital Library