A D-Band to J-Band Low-Noise Amplifier with High Gain-Bandwidth Product in an Advanced 130 nm SiGe BiCMOS Technology

التفاصيل البيبلوغرافية
العنوان: A D-Band to J-Band Low-Noise Amplifier with High Gain-Bandwidth Product in an Advanced 130 nm SiGe BiCMOS Technology
المؤلفون: Andree, Marcel, Grzyb, Janusz, Heinemann, Bernd, Pfeiffer, Ullrich
المصدر: 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Radio Frequency Integrated Circuits Symposium (RFIC), 2023 IEEE. :137-140 Jun, 2023
Relation: 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350321227
تدمد:23750995
DOI:10.1109/RFIC54547.2023.10186116