Optimization of the electrical conductivity and thermal coefficient of temperature (TCR) on hydrogenated amorphous silicon-germanium films doped with nitrogen (a-SiGe:H,N) for applications on high performance infrared detectors

التفاصيل البيبلوغرافية
العنوان: Optimization of the electrical conductivity and thermal coefficient of temperature (TCR) on hydrogenated amorphous silicon-germanium films doped with nitrogen (a-SiGe:H,N) for applications on high performance infrared detectors
المؤلفون: Velandia, Oscar, Moreno, Mario, Zavala, Ricardo, Morales, Alfredo, Torres, Alfonso, Hernandez, Luis
المصدر: 2023 IEEE Latin American Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2023 IEEE Latin American. :1-5 Jul, 2023
Relation: 2023 IEEE Latin American Electron Devices Conference (LAEDC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350311907
تدمد:28353471
DOI:10.1109/LAEDC58183.2023.10209128