Influence of Interfacial Layers and High-k Post Dielectric Annealing On the Characteristics of MOS Devices

التفاصيل البيبلوغرافية
العنوان: Influence of Interfacial Layers and High-k Post Dielectric Annealing On the Characteristics of MOS Devices
المؤلفون: Sang, Guanqiao, Zhang, Qingzhu, Yin, Huaxiang, Li, Junfeng, Qin, Xulei
المصدر: 2023 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2023 China. :1-3 Jun, 2023
Relation: 2023 China Semiconductor Technology International Conference (CSTIC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350311006
9798350310993
DOI:10.1109/CSTIC58779.2023.10219268