AlGaN/GaN RF Power Amplifier Failure Analysis and Backside Via Etching Process Improvement

التفاصيل البيبلوغرافية
العنوان: AlGaN/GaN RF Power Amplifier Failure Analysis and Backside Via Etching Process Improvement
المؤلفون: Shi, Lin, Wang, Chong, Cai, Xiaolong, Zheng, Xuefeng, Liu, Haijun
المصدر: 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2023 IEEE International Symposium on the. :1-4 Jul, 2023
Relation: 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350301649
تدمد:19461550
DOI:10.1109/IPFA58228.2023.10249172