In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate

التفاصيل البيبلوغرافية
العنوان: In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate
المؤلفون: Corsino, Dianne C., Bestelink, Eva, Catania, Federica, Sporea, Radu A., Munzenrieder, Niko, Cantarella, Giuseppe
المصدر: 2023 IEEE International Flexible Electronics Technology Conference (IFETC) Flexible Electronics Technology Conference (IFETC), 2023 IEEE International. :1-3 Aug, 2023
Relation: 2023 IEEE International Flexible Electronics Technology Conference (IFETC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350332094
DOI:10.1109/IFETC57334.2023.10254818