التفاصيل البيبلوغرافية
العنوان: |
The development of the process for low-temperature surface carbonization of Si(111) substrate and the subsequent growth of 3C-SiC epitaxial buffer layer |
المؤلفون: |
Tsai, Pei-Chun, Huang, Jhong-Ren, Hong, Lu-Sheng |
المصدر: |
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2023 IEEE Workshop on. :1-4 Aug, 2023 |
Relation: |
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) |
قاعدة البيانات: |
IEEE Xplore Digital Library |