مؤتمر
The development of the process for low-temperature surface carbonization of Si(111) substrate and the subsequent growth of 3C-SiC epitaxial buffer layer
| العنوان: | The development of the process for low-temperature surface carbonization of Si(111) substrate and the subsequent growth of 3C-SiC epitaxial buffer layer |
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| المؤلفون: | Tsai, Pei-Chun, Huang, Jhong-Ren, Hong, Lu-Sheng |
| المصدر: | 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2023 IEEE Workshop on. :1-4 Aug, 2023 |
| Relation: | 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
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