Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration – Basic Concept and Technology

التفاصيل البيبلوغرافية
العنوان: Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration – Basic Concept and Technology
المؤلفون: Makhoul, Ralph, Beydoun, Nour, Bourennane, Abdelhakim, Phung, Luong Viet, Lazar, Mihai, Richardeau, Frederic, Godignon, Philippe, Planson, Dominique, Morel, Herve, Bourrier, David
المصدر: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) Power Electronics and Applications (EPE'23 ECCE Europe), 2023 25th European Conference on. :1-9 Sep, 2023
Relation: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9789075815412
DOI:10.23919/EPE23ECCEEurope58414.2023.10264325