Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory

التفاصيل البيبلوغرافية
العنوان: Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory
المؤلفون: Dubreuil, T., Barraud, S., Pedini, J.-M., Hartmann, J.-M., Boulard, F., Sarrazin, A., Gharbi, A., Sturm, J., Lambert, A., Martin, S., Castellani, N., Anotta, A., Magalhaes-Lucas, A., Souhaite, A., Andrieu, F.
المصدر: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2023 - IEEE 53rd European. :117-120 Sep, 2023
Relation: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350304237
9798350304220
تدمد:23786558
DOI:10.1109/ESSDERC59256.2023.10268513