دورية أكاديمية

Pulsed Low-Frequency Noise Characterization on Al/ZnO/Al ReRAM to Investigate the Role of Deep-Level Oxygen Vacancy State in HRS Leakage

التفاصيل البيبلوغرافية
العنوان: Pulsed Low-Frequency Noise Characterization on Al/ZnO/Al ReRAM to Investigate the Role of Deep-Level Oxygen Vacancy State in HRS Leakage
المؤلفون: Vishwakarma, K., Kishore, R., Datta, A.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(11):5665-5671 Nov, 2023
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:00189383
15579646
DOI:10.1109/TED.2023.3319279