Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress

التفاصيل البيبلوغرافية
العنوان: Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress
المؤلفون: Li, Xinze, Wu, Yuxuan, Teng, Qiao, Sun, Ying, Gong, Xiao, Besnard, Guillaume, Maleville, Christophe, Weber, Olivier, Zhang, Rui, Chen, Bing, Gao, Dawei, Cheng, Ran
المصدر: 2023 International Conference on IC Design and Technology (ICICDT) IC Design and Technology (ICICDT), 2023 International Conference on. :116-119 Sep, 2023
Relation: 2023 International Conference on IC Design and Technology (ICICDT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350319316
تدمد:26910462
DOI:10.1109/ICICDT59917.2023.10332402