Surface mobility in silicon at large operating temperature

التفاصيل البيبلوغرافية
العنوان: Surface mobility in silicon at large operating temperature
المؤلفون: Reggiani, S., Valdinoci, A., Colalongo, L., Rudan, M., Baccarani, G., Stricker, A., Illien, F., Felber, N., Fichtner, W., Mettler, S., Lindenkreuz, S., Zullino, L.
المصدر: International Conference on Simulation of Semiconductor Processes and Devices Simulation of semiconductor processes Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on. :15-20 2002
Relation: 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:4891140275
9784891140274
DOI:10.1109/SISPAD.2002.1034506