دورية أكاديمية
Bypass Resistive RAM With Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications
العنوان: | Bypass Resistive RAM With Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications |
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المؤلفون: | Han, G., Lee, K., Kim, D., Seo, Y., Lee, J., Choi, J., Ahn, D., Oh, S., Hwang, H. |
المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(2):192-195 Feb, 2024 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 07413106 15580563 |
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DOI: | 10.1109/LED.2023.3340176 |