التفاصيل البيبلوغرافية
| العنوان: |
Investigation of the Trap States in Fully-Recessed Normally off LPCVD-Si3N4/PEALD-AlN/GaN MIS-HEMT with in-Situ N2 or H2/N2 Plasma Pretreatment |
| المؤلفون: |
Yang, Jiaofen, Tao, Ming, Xiao, Jing, Zhang, Bin, Wang, Hongyue, He, Min, Liu, Jie, Wang, Jinyan, Wang, Maojun |
| المصدر: |
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023 20th China International Forum on. :204-207 Nov, 2023 |
| Relation: |
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
