التفاصيل البيبلوغرافية
| العنوان: |
Implementation of 1200V SiC MOSFET with 20% Lower On-Resistance by Designing the Interrupted P+ Region |
| المؤلفون: |
Niu, Xiping, Xu, Kaixuan, Sang, Ling, Luo, Weixia, Liu, Hao, He, Yawei, Li, Xinyu, Zhang, Naling, Tian, Yan, Li, Chenmeng, Ge, Huan, Li, Jialin, Li, Qingling, Zhu, Tao, Li, Zheyang, Jin, Rui |
| المصدر: |
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023 20th China International Forum on. :68-71 Nov, 2023 |
| Relation: |
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
