Complementary Field-Effect Transistor (CFET) Demonstration at 48nm Gate Pitch for Future Logic Technology Scaling

التفاصيل البيبلوغرافية
العنوان:	Complementary Field-Effect Transistor (CFET) Demonstration at 48nm Gate Pitch for Future Logic Technology Scaling
المؤلفون:	Liao, S., Yang, L., Chiu, T.K., You, W.X., Wu, T.Y., Yang, K.F., Woon, W.Y., Ho, W.D., Lin, Z.C., Hung, H.Y., Huang, J.C., Huang, S.T., Tsai, M.C., Yu, C.L., Chen, S.H., Hu, K.K., Shih, C.C., Chen, Y.T., Liu, C.Y., Lin, H.Y., Chung, C.T., Su, L., Chou, C.Y., Shen, Y.T., Chang, C.M., Lin, Y.T., Lin, M.Y., Lin, W.C., Chen, B.H., Hou, C.S., Lai, F., Chen, X., Wu, J., Lin, C.K., Cheng, Y.K., Lin, H.T., Ku, Y.C., Lin, S.S., Lu, L.C., Jang, S.M., Cao, M.
المصدر:	2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Relation:	2023 International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library