First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, Id of 2.32 mA/μm and gm of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C

التفاصيل البيبلوغرافية
العنوان:	First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, Id of 2.32 mA/μm and gm of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C
المؤلفون:	Hu, Qianlan, Gu, Chengru, Liu, Shiyuan, Zeng, Min, Zhu, Shenwu, Kang, Jiyang, Liu, Ranhui, Zhao, Wenjie, Tong, Anyu, Li, Qijun, Fu, Tianyue, Huang, Ru, Wu, Yanqing
المصدر:	2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Relation:	2023 International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library