Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping

التفاصيل البيبلوغرافية
العنوان: Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping
المؤلفون: Safron, N., Chiu, H.-Y., Chao, T.-A., Su, S.-K., Passlack, M., Chiu, K.-H., Chen, C.-W., Kei, C.-C., Chou, C.-H., Lee, T.-E., Wang, J.-F., Chang, C.-S., Liew, S.-L., Hou, V.D.H., Wang, H., Chang, W.-H., Wong, H.-S.P., Pitner, G., Chien, C.-H., Radu, I.P.
المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Relation: 2023 International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350327670
تدمد:2156017X
DOI:10.1109/IEDM45741.2023.10413771