دورية أكاديمية
Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs
| العنوان: | Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs |
|---|---|
| المؤلفون: | Lal, S., Lu, J., Thibeault, B.J., Wong, M.H., van de Walle, C.G., DenBaars, S.P., Mishra, U.K. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):1702-1709 Mar, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
|---|---|
| DOI: | 10.1109/TED.2024.3355379 |