دورية أكاديمية
Enhanced ON/OFF Ratio (4 × 105) and Robust Endurance (> 1010) in an InGaZnO/HfxZr1-xO2 Ferroelectric Diode via Defect Engineering
العنوان: | Enhanced ON/OFF Ratio (4 × 105) and Robust Endurance (> 1010) in an InGaZnO/HfxZr1-xO2 Ferroelectric Diode via Defect Engineering |
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المؤلفون: | Jung, L., Oh, S., Jang, H., Lee, K., Choi, W., Hwang, H. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):2238-2242 Mar, 2024 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
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DOI: | 10.1109/TED.2024.3360010 |