التفاصيل البيبلوغرافية
| العنوان: |
Performance Analysis of Normally-Off $\beta-(\text{AlxGa} 1-\mathrm{x})_{2} \mathrm{O}_{3} / \text{Ga}_{2} \mathrm{O}_{3}$ High Electron Mobility Transistor (HEMT) With p-GaN Gate and Addon AlGa2O3 Layer |
| المؤلفون: |
Mukherjee, Praskandan, Kashyap, Nitesh, Ranjan, Ravi |
| المصدر: |
2023 3rd International Conference on Advancement in Electronics & Communication Engineering (AECE) Advancement in Electronics & Communication Engineering (AECE), 2023 3rd International Conference on. :779-784 Nov, 2023 |
| Relation: |
2023 3rd International Conference on Advancement in Electronics & Communication Engineering (AECE) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
