دورية أكاديمية
A 3-nm FinFET 27.6-Mbit/mm2 Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking
| العنوان: | A 3-nm FinFET 27.6-Mbit/mm2 Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking |
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| المؤلفون: | Aoyagi, Y., Nii, K., Yabuuchi, M., Tanaka, T., Ishii, Y., Osada, Y., Nakazato, T., Wang, I., Hsu, Y., Cheng, H., Liao, H., Chang, T.J. |
| المصدر: | IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 59(4):1225-1234 Apr, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189200 1558173X |
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| DOI: | 10.1109/JSSC.2024.3355447 |