دورية أكاديمية
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach
| العنوان: | Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach |
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| المؤلفون: | Zhu, Z., Bosi, G., Raffo, A., Crupi, G., Cai, J. |
| المصدر: | IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 12:201-210 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 21686734 |
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| DOI: | 10.1109/JEDS.2024.3364809 |