دورية أكاديمية
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices
| العنوان: | Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices |
|---|---|
| المؤلفون: | Mishra, N.V., Medury, A.S. |
| المصدر: | IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 24(2):225-232 Jun, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 15304388 15582574 |
|---|---|
| DOI: | 10.1109/TDMR.2024.3366592 |