دورية أكاديمية
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices
العنوان: | Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices |
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المؤلفون: | Mishra, N.V., Medury, A.S. |
المصدر: | IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 24(2):225-232 Jun, 2024 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 15304388 15582574 |
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DOI: | 10.1109/TDMR.2024.3366592 |