دورية أكاديمية
Large Memory Window Antifuse HfO₂-Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 °C Retention
| العنوان: | Large Memory Window Antifuse HfO₂-Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 °C Retention |
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| المؤلفون: | Hsieh, D., Ni, J., Yeh, W., Hong, Z., Luo, H., Hsu, M., Cho, T., Chao, T. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(4):2824-2829 Apr, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2024.3364577 |