15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C

التفاصيل البيبلوغرافية
العنوان:	15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C
المؤلفون:	Huang, Yi-Cheng, Liu, Shang-Hsuan, Chen, Hsu-Shun, Feng, Hsin-Chang, Li, Chih-Feng, Yang, Chou-Ying, Chang, Wei-Keng, Yang, Chang-Feng, Wu, Chun-Yu, Lin, Yen-Cheng, Yang, Tsung-Tse, Chang, Chih-Yang, Chu, Wen-Ting, Chuang, Harry, Wang, Yih, Chih, Yu-Der, Chang, Tsung-Yung Jonathan
المصدر:	2024 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2024 IEEE International. 67:288-290 Feb, 2024
Relation:	2024 IEEE International Solid-State Circuits Conference (ISSCC)
قاعدة البيانات:	IEEE Xplore Digital Library