34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices

التفاصيل البيبلوغرافية
العنوان:	34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices
المؤلفون:	Khwa, Win-San, Wu, Ping-Chun, Wu, Jui-Jen, Su, Jian-Wei, Chen, Ho-Yu, Ke, Zhao-En, Chiu, Ting-Chien, Hsu, Jun-Ming, Cheng, Chiao-Yen, Chen, Yu-Chen, Lo, Chung-Chuan, Liu, Ren-Shuo, Hsieh, Chih-Cheng, Tang, Kea-Tiong, Chang, Meng-Fan
المصدر:	2024 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2024 IEEE International. 67:568-570 Feb, 2024
Relation:	2024 IEEE International Solid-State Circuits Conference (ISSCC)
قاعدة البيانات:	IEEE Xplore Digital Library