TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices

التفاصيل البيبلوغرافية
العنوان: TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices
المؤلفون: Neuendank, Jereme, Al Mamun, Fahad, Barnaby, Hugh, Bonaldo, Stefano, Spear, Matthew, Wallace, Trace, Loveless, Daniel, Pew, Jacob, Nour, Mohamed, Manos, Pete, Giorno, Zach, Suriono, Usman, Chambers, Mike, Kosier, Steve
المصدر: 2023 IEEE International Integrated Reliability Workshop (IIRW) Integrated Reliability Workshop (IIRW), 2023 IEEE International. :1-5 Oct, 2023
Relation: 2023 IEEE International Integrated Reliability Workshop (IIRW)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350327274
تدمد:23748036
DOI:10.1109/IIRW59383.2023.10477707