دورية أكاديمية

Analysis of the Single-Event Latch-Up Cross section of a 16 nm FinFET System-on-Chip Using Backside Single-Photon Absorption Laser Testing and Correlation With Heavy Ion Data

التفاصيل البيبلوغرافية
العنوان: Analysis of the Single-Event Latch-Up Cross section of a 16 nm FinFET System-on-Chip Using Backside Single-Photon Absorption Laser Testing and Correlation With Heavy Ion Data
المؤلفون: Fongral, M., Pouget, V., Saigne, F., Ruffenach, M., Carron, J., Malou, F., Mekki, J.
المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(8):1645-1653 Aug, 2024
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:00189499
15581578
DOI:10.1109/TNS.2024.3380670