دورية أكاديمية
Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding
العنوان: | Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding |
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المؤلفون: | Ji, R., Yao, L., Jiao, J., Xu, G., Fu, F., Lin, G., Li, C., Huang, W., Xue, C., Chen, S. |
المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(6):948-951 Jun, 2024 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 07413106 15580563 |
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DOI: | 10.1109/LED.2024.3386688 |