دورية أكاديمية
Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography
العنوان: | Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography |
---|---|
المؤلفون: | Sung, C., Na, J., Nam, S., Cho, S.H. |
المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(6):1020-1023 Jun, 2024 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 07413106 15580563 |
---|---|
DOI: | 10.1109/LED.2024.3387052 |