دورية أكاديمية
High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs With N₂O Oxidation Treatment
| العنوان: | High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs With N₂O Oxidation Treatment |
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| المؤلفون: | Lu, H., Deng, L., Yang, L., Hou, B., Zhou, L., Zhang, M., Chen, L., Wu, M., Yu, Q., Cheng, K., Ma, X., Hao, Y. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(6):960-963 Jun, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2024.3389826 |