التفاصيل البيبلوغرافية
| العنوان: |
Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND Applications |
| المؤلفون: |
Das, Dipjyoti, Park, Hyeonwoo, Wang, Zekai, Zhang, Chengyang, Ravindran, Prasanna Venkatesan, Park, Chinsung, Afroze, Nashrah, Hsu, Po-Kai, Tian, Mengkun, Chen, Hang, Chern, Winston, Lim, Suhwan, Kim, Kwangsoo, Kim, Kijoon, Kim, Wanki, Ha, Daewon, Yu, Shimeng, Datta, Suman, Khan, Asif |
| المصدر: |
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024 |
| Relation: |
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
