Experimental Studies of Extended Drain MOSFET in 130-nm SOI Technology for Power Amplifier Design

التفاصيل البيبلوغرافية
العنوان: Experimental Studies of Extended Drain MOSFET in 130-nm SOI Technology for Power Amplifier Design
المؤلفون: Paul, Binoy Kumar, Gedela, Santosh Kumar, Toh, Rui Tze, Vanukuru, Venkata
المصدر: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024
Relation: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350371529
DOI:10.1109/EDTM58488.2024.10511627