Ultra-Fast Oxide Traps in Sub-20-nm DRAM Technology: from Characterization to Physical origin identification

التفاصيل البيبلوغرافية
العنوان: Ultra-Fast Oxide Traps in Sub-20-nm DRAM Technology: from Characterization to Physical origin identification
المؤلفون: Wang, Da, Liu, Yong, Xue, Yongkang, Ren, Pengpeng, Sun, Zixuan, Wang, Zirui, Liu, Yueyang, Cheng, Zhijun, Yang, Haiyang, Liu, Xiangli, Wu, Blacksmith, Cao, Kanyu, Wang, Runsheng, Ji, Zhigang, Huang, Ru
المصدر: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024
Relation: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350371529
DOI:10.1109/EDTM58488.2024.10511687