New Steep Subthreshold Slope Device “Gate-Controlled Carrier-Injection SOI-Transistor”

التفاصيل البيبلوغرافية
العنوان: New Steep Subthreshold Slope Device “Gate-Controlled Carrier-Injection SOI-Transistor”
المؤلفون: Yonezaki, Haruki, Mori, Takayuki, Ida, Jiro
المصدر: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024
Relation: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350371529
DOI:10.1109/EDTM58488.2024.10511730