High quality PVD-MoS2 film on plasma-ALD-SiO2 underlaying material for CFET integration

التفاصيل البيبلوغرافية
العنوان: High quality PVD-MoS2 film on plasma-ALD-SiO2 underlaying material for CFET integration
المؤلفون: Matsunaga, Naoki, Imai, Shinya, Shirokura, Takanori, Tsutsui, Kazuo, Kakushima, Kuniyuki, Wakabayashi, Hitoshi
المصدر: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024
Relation: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350371529
DOI:10.1109/EDTM58488.2024.10511906