دورية أكاديمية
Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs
| العنوان: | Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs |
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| المؤلفون: | Hayashi, S., Wada, K. |
| المصدر: | IEEE Open Journal of Power Electronics IEEE Open J. Power Electron. Power Electronics, IEEE Open Journal of. 5:709-717 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 26441314 |
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| DOI: | 10.1109/OJPEL.2024.3396839 |