دورية أكاديمية
Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf₀.₅Zr₀.₅O₂ Ferroelectric Memory Arrays
العنوان: | Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf₀.₅Zr₀.₅O₂ Ferroelectric Memory Arrays |
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المؤلفون: | Guo, S., Yu, J., Wang, H., Jin, X., Li, H., Wu, C., Chen, L., Lin, Y., Wei Zhang, D. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(6):3645-3650 Jun, 2024 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
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DOI: | 10.1109/TED.2024.3394460 |