دورية أكاديمية

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf₀.₅Zr₀.₅O₂ Ferroelectric Memory Arrays

التفاصيل البيبلوغرافية
العنوان: Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf₀.₅Zr₀.₅O₂ Ferroelectric Memory Arrays
المؤلفون: Guo, S., Yu, J., Wang, H., Jin, X., Li, H., Wu, C., Chen, L., Lin, Y., Wei Zhang, D.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(6):3645-3650 Jun, 2024
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:00189383
15579646
DOI:10.1109/TED.2024.3394460