دورية أكاديمية
Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current
| العنوان: | Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current |
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| المؤلفون: | Guo, C., Cui, S., Li, Y., Yao, B., Zhang, Y., Zhu, H., Zhang, M., Feng, S. |
| المصدر: | IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 39(8):9629-9637 Aug, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 08858993 19410107 |
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| DOI: | 10.1109/TPEL.2024.3397672 |